{"title":"High-Temperature, High Reliability EEPROM Design For Automotive Applications","authors":"J. Walsh, G. Scott","doi":"10.1109/CICC.2006.320818","DOIUrl":null,"url":null,"abstract":"An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
