A high-speed CMOS image sensor with column-parallel single capacitor CDSs and single-slope ADCs

Quanliang Li, Cong Shi, N. Wu
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Abstract

This paper presents a high speed CMOS image sensor (CIS) with column-parallel single capacitor correlated double samplings (CDSs), programmable gain amplifiers (PGAs) and single-slope analog-to-digital converters (ADCs). The single capacitor CDS circuit has only one capacitor so that the area CDS circuit is small. In order to attain appropriate image contrast under different light conditions, the signal range can be adjusted by PGA. Single-slope ADC has smaller chip area than others ADCs and is suitable for column-parallel CIS architectures. A prototype sensor of 256x256 pixels was realized in a 0.13μm 1P3M CIS process. Its pixel circuit is 4T active pixel sensor (APS) and pixel size is 10x10μm2. Total chip area is 4x4mm2. The prototype achieves the full frame rate in excess of 250 frames per second, the sensitivity of 10.7V/lx•s, the conversion gain of 55.6μV/e and the column-to- column fixed-pattern noise (FPN) 0.41%.
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一种高速CMOS图像传感器,具有列并联单电容cds和单斜率adc
本文介绍了一种高速CMOS图像传感器(CIS),它具有列并联单电容相关双采样(cds)、可编程增益放大器(PGAs)和单斜率模数转换器(adc)。单电容CDS电路只有一个电容,使CDS电路的面积小。为了在不同的光照条件下获得合适的图像对比度,PGA可以调节信号范围。单斜率ADC的芯片面积比其他ADC小,适用于列并行CIS架构。采用0.13μm 1P3M CIS工艺,实现了256x256像素的传感器原型。其像素电路为4T有源像素传感器(APS),像素尺寸为10x10μm2。总芯片面积为4x4mm2。该样机实现了超过250帧/秒的全帧速率、10.7V/lx•s的灵敏度、55.6μV/e的转换增益和0.41%的柱对柱固定模式噪声(FPN)。
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