A 60GHz-band 20dBm power amplifier with 20% peak PAE

Yi Zhao, J. Long, M. Spirito
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引用次数: 39

Abstract

A three-stage, 60GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base differential pair stages extend BVCEO, while neutralization increases isolation, promoting stability. Self-shielded transformers, a parasitic-compensated 4∶1 output combiner and 2∶4 input splitter are designed for low insertion loss and compact dimensions on-chip. Measured small-signal gain is >20dB with over 10GHz −3dB bandwidth. Reverse isolation is better than 51dB across 50–65GHz. Maximum output power and peak-PAE are 20.5dBm and 20%, respectively, at 61.5GHz. The PA consumes 353mW from a 1.8V supply and 0.25mm2 active area.
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60ghz频段20dBm功率放大器,峰值PAE为20%
在130nm SiGe-BiCMOS中实现了一个三级60GHz变压器耦合差分功率放大器。共基差分对级扩展BVCEO,而中和增加隔离,促进稳定性。设计了自屏蔽变压器、寄生补偿4∶1输出组合器和2∶4输入分路器,具有插入损耗低、片上尺寸小等优点。测量的小信号增益为>20dB,带宽超过10GHz - 3dB。在50-65GHz范围内,反向隔离优于51dB。在61.5GHz时,最大输出功率为20.5dBm,峰值pae为20%。PA从1.8V电源和0.25mm2有效面积消耗353mW。
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