Flash Lamp Annealing Latest Technology for 45nm device and Future devices

H. Kiyama
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引用次数: 2

Abstract

FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future
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45纳米器件及未来器件的闪光灯退火最新技术
FLA(闪光灯退火)用于65nm代器件的制造。对于下一代45nm和下一代器件,我们已经选择了与毫秒退火相关的3个关键主题:过程可控性,S/D(源漏)激活,硅化。不用说,过程可控性对于器件制造是非常重要的。对S/D活化和硅化可控性的工艺要求也越来越高。在这些主题的评估下,FLA技术仍然是45纳米器件和未来的有希望的候选技术
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