MOS compact I-V modeling with variable accuracy based on genetic algorithm and simulated annealing

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434588

M. Taherzadeh‐Sani, A. Abbasian, B. Amelifard, A. Afzali-Kusha

引用次数: 4

Abstract

In this paper, a new approach to model the I-V characteristic of MOSFETs, which considers the required accuracy of the goal model, is presented. The approach utilizes a combination of genetic algorithm and simulated annealing to determine the simplest model with a specific accuracy. While the genetic algorithm determines which terms should be used in the model, the simulated annealing determines the coefficient values related to each term in the I-V characteristic of MOSFFT model. For a desired accuracy considered here, the accuracy of the results predicted by our model are within 3.1%, for PMOS, and 1.3%, for NMOS, of the results of BSIM3v3 model with much less complexity.

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基于遗传算法和模拟退火的变精度MOS紧凑I-V建模

本文提出了一种考虑目标模型精度要求的模拟mosfet I-V特性的新方法。该方法采用遗传算法和模拟退火相结合的方法来确定具有特定精度的最简单模型。遗传算法决定模型中应该使用哪些项，模拟退火决定MOSFFT模型中I-V特性中每个项相关的系数值。对于这里考虑的期望精度，我们的模型预测结果的精度在BSIM3v3模型结果的3.1%(对于PMOS)和1.3%(对于NMOS)内，并且复杂性要低得多。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

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