Yang Gao, Junchao Wang, S. M. Nawaz, Fan Zhang, Yuhuai Liu, J. Liou
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引用次数: 1
Abstract
This paper investigates the immunity and effect of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode for electro-static discharge (ESD) protection. The introduced off-chip ESD device, in our case a TVS diode, increases the power when the LNA fails, but also results in mismatch in terms of S-parameters and noise figure. It is especially obvious when frequencies rise higher. To overcome this side effect, the filter can be constructed, providing standard Chebyshev filter matching for the LNA. This method has certain reference value for the further research of semiconductor protection under ESD pulses.
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