B. Dieng, M. Beye, A. S. Maiga, M. Toure, D. Kobor
{"title":"Fabrication and characterization of silicon nanowires for photovoltaic applications","authors":"B. Dieng, M. Beye, A. S. Maiga, M. Toure, D. Kobor","doi":"10.1109/EVER.2018.8362354","DOIUrl":null,"url":null,"abstract":"This study pertains to the fabrication of silicon nanowires (SiNWs) by the Metal Assisted Chemical Etching (MACE) method and their characterization. Here, silver (Ag)-metal is used as catalyst. For different deposition times of the Ag-metal, SiNWs with different heights are obtained. The optical and electrical properties of the SiNWs are analyzed and compared with those of the bulk silicon. It was found that SiNWs, obtained for 5 minutes processing, perform better than the others. They exhibit the lowest reflectance (around 5%) and the best electric conductivity.","PeriodicalId":344175,"journal":{"name":"2018 Thirteenth International Conference on Ecological Vehicles and Renewable Energies (EVER)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Thirteenth International Conference on Ecological Vehicles and Renewable Energies (EVER)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EVER.2018.8362354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This study pertains to the fabrication of silicon nanowires (SiNWs) by the Metal Assisted Chemical Etching (MACE) method and their characterization. Here, silver (Ag)-metal is used as catalyst. For different deposition times of the Ag-metal, SiNWs with different heights are obtained. The optical and electrical properties of the SiNWs are analyzed and compared with those of the bulk silicon. It was found that SiNWs, obtained for 5 minutes processing, perform better than the others. They exhibit the lowest reflectance (around 5%) and the best electric conductivity.
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