{"title":"The contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage FRDs: A new insight","authors":"Peng Li, Yuehua Wu, J. Wen, Lei Cui, Chenjing Liu","doi":"10.1109/EDSSC.2017.8126523","DOIUrl":null,"url":null,"abstract":"For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126523","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.
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