{"title":"A Wideband ΔΣ Digital-RF Modulator With Self-Tuned RF Bandpass Reconstruction Filter","authors":"A. Jerng, C. Sodini","doi":"10.1109/CICC.2006.320848","DOIUrl":null,"url":null,"abstract":"A low power, wideband transmitter architecture utilizing ΔΣ direct digital modulation of an RF carrier is presented. Spurious signals associated with direct digital-RF conversion are eliminated through integration of a self-tuned passive LC bandpass filter. The digital-RF modulator is intended for OFDM systems and can provide data rates greater than 1 Gb/s using a bandwidth of 200 MHz centered at 5.25 GHz. Measured results show that the largest modulator spur is -44 dBc. The transmitter, including LO quadrature generator, quadrature digital-RF converter, and filter circuitry, consumes 50 mW and occupies a die area of 0.56 mm2 in a 0.13μm SiGe BiCMOS process.","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A low power, wideband transmitter architecture utilizing ΔΣ direct digital modulation of an RF carrier is presented. Spurious signals associated with direct digital-RF conversion are eliminated through integration of a self-tuned passive LC bandpass filter. The digital-RF modulator is intended for OFDM systems and can provide data rates greater than 1 Gb/s using a bandwidth of 200 MHz centered at 5.25 GHz. Measured results show that the largest modulator spur is -44 dBc. The transmitter, including LO quadrature generator, quadrature digital-RF converter, and filter circuitry, consumes 50 mW and occupies a die area of 0.56 mm2 in a 0.13μm SiGe BiCMOS process.