{"title":"Fast and slow charge trapping/detrapping processes in high-k nMOSFETs","authors":"D. Heh, R. Choi, C. Young, G. Bersuker","doi":"10.1109/IRWS.2006.305224","DOIUrl":null,"url":null,"abstract":"A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time
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