Heterogenous integration of III-V MMIC and Si CMOS

Abstract

In this work, we demonstrate the wafer-scale heterogeneous integration of III-V MMIC and Silicon complementary metal oxide semiconductor (Si CMOS) on the same Silicon substrate based on epitaxial layer transfer technique, III-V Compound semiconductor devices are vertical stacked at the top of the Si CMOS wafer using wafer bonding technique. Meanwhile, we exhibit a wide band GaAs digital controlled switch circuit and InP HBT quantizing chip with 1:16 demultiplexer as examples, which shows the potential to integrate III-V MMIC and Si CMOS on the same chip to take advance of the two different material systems.