Development of a 0.5-THz Waveguide NbN-Based SIS Mixer

Jing Li, M. Takeda, Zhen Wang, S. Shi
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引用次数: 3

Abstract

This paper mainly reports the development of a 0.5-THz waveguide SIS (superconductor - insulator - superconductor) mixer, which adopts twin NbN-based SIS junctions (NbN/AlN/NbN) connected in parallel. The 0.5-THz waveguide NbN SIS mixer is designed incorporating with a 51-mum thick MgO substrate and a waveguide mixer mount with no back-short cavity. Detailed simulation results, junction fabrication process and junction I-V characteristics are described. Preliminary FTS (Fourier transform spectrometer) measurement results will also be discussed.
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基于0.5 thz波导nbn的SIS混频器的研制
本文主要报道了一种0.5 thz波导SIS(超导体-绝缘体-超导体)混频器的研制,该混频器采用双NbN基SIS结(NbN/AlN/NbN)并联。0.5 thz波导NbN SIS混频器设计结合了51 μ m厚的MgO衬底和无背短腔的波导混频器底座。详细描述了仿真结果、结的制作工艺和结的I-V特性。本文还将讨论傅立叶变换光谱仪的初步测量结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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