Plasma-chemical deposition of nitrides out of halogenides

Abstract

Constructions of MW PGs and of reactors relevanted have been worked out, modes of ultrafine powders' and films' deposition of some metal nitrides out of their chlorides in nitrogen plasma now under atmosphere pressure have been researched. Process of film's formation has diffusional character, growth rate has been controlled by diffusion transfer of volatile halogenides of metal towards substrate's surface. During its formation the film undergoes the stages of nucleation and growth of nuclei. As the temperature of substrate is less than 1000 K processes of coalescence and of secondary recrystallization in a growing layer being hindered, that have resulted in a sharping decrease of a grain size. Values of deposition rate achieved have been about (10/sup 2/-10/sup 3/) A/s. In case of nitride and oxide temperature regions be separated the films obtained have been monophase and disoxidic ones.