T. Tanaka, T. Mizoshiri, E. Suekawa, I. Umesaki, Y. Kawaguchi, J. Donlon
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引用次数: 6
Abstract
A high voltage intelligent power module (HVIPM) rated at 600 A, 6.5 kV has been developed using an optimized punch through IGBT chip, coordinated free-wheel diode, high quality manufacturing processes, and high performance gate control technology.
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