E. Bastida, P. Antolini, A. Castelli, G. Donzelli, B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti
{"title":"High Efficiency and Power Ion Implanted MESFET Devices","authors":"E. Bastida, P. Antolini, A. Castelli, G. Donzelli, B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti","doi":"10.1109/EUMA.1994.337366","DOIUrl":null,"url":null,"abstract":"The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 24th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1994.337366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.
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