{"title":"Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED","authors":"Bo-Han Lai, Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1117/12.889947","DOIUrl":null,"url":null,"abstract":"The SiO<inf>x</inf> thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiO<inf>x</inf> thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiO<inf>x</inf> thickness of 385 nm has the maximum EL power of 469 nW.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Asia Communications and Photonics Conference and Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.889947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.
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