{"title":"Improved design for microplasma generation using planar interdigitated terminal (IDT) structure for explosive fuse applications","authors":"S. Dutta, R. K. Bhan, Udita Kapoor","doi":"10.1109/ISCO.2017.7856025","DOIUrl":null,"url":null,"abstract":"This paper discusses about improved design for microplasma generation using a planar interdigitated terminal (IDT) structure. The IDT structure is fabricated by Au electroplating (5 µm) using a single mask process on quartz wafer. The gap between the subsequent IDT fingers is kept at 30 µm. The IDT structure showed microplasma generation at 570–580 V bias in atmospheric condition.","PeriodicalId":321113,"journal":{"name":"2017 11th International Conference on Intelligent Systems and Control (ISCO)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 11th International Conference on Intelligent Systems and Control (ISCO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCO.2017.7856025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This paper discusses about improved design for microplasma generation using a planar interdigitated terminal (IDT) structure. The IDT structure is fabricated by Au electroplating (5 µm) using a single mask process on quartz wafer. The gap between the subsequent IDT fingers is kept at 30 µm. The IDT structure showed microplasma generation at 570–580 V bias in atmospheric condition.
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