Z-Scan Measurement in Amorphous As2S3 Thin Film

Y. Sohn, C. Kwak, O. S. Choe
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Abstract

Z-scan technique is very useful method for measuring the magnitude and the sign of the nonlinear refractive index due to its simple geometry and high sensitivity compared with nonlinear interferometry, degenerate four-wave mixing, nearly degenerate three-wave mixing, ellipse rotation, beam distortion measurement.[1, 2] With this technique the measurements and analysis for several nonlinear optical materials such as CS2, ZnSe, GaAs, CdTe had been succesfully acomplished by using high power pulse laser.[1-3] In this paper, we present a cw pump-probe z-scan method for determining the optical nonlinearity of an amorphous As2S3 thin film. In an amorphous chalcogenide As2S3, thin film the optical nonlinearity originates from the photostructural changes of the material by band gap illumination (bandgap energy of Eg ≃ 2.5eV corresponding to Ar-ion laser wavelength of 514nm), which results in photodarkening and photoanisotropy. These effects have been extensively investigated as holographic recording medium for optical information processing, polarization hologram and binary phase gratings such as Dammann grating.[4-6]
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非晶As2S3薄膜的z扫描测量
与非线性干涉、简并四波混频、近简并三波混频、椭圆旋转、光束畸变测量相比,z扫描技术几何结构简单,灵敏度高,是测量非线性折射率大小和符号的有效方法。[1,2]利用该技术,利用高功率脉冲激光成功地完成了对CS2、ZnSe、GaAs、CdTe等非线性光学材料的测量和分析。[1-3]在本文中,我们提出了一种连续波泵浦探针z扫描方法来确定非晶As2S3薄膜的光学非线性。在非晶硫化物As2S3薄膜中,带隙照射(带隙能量为Eg≃2.5eV,对应ar离子激光波长为514nm)引起的光结构变化导致了薄膜的光变暗和光各向异性。这些效应已被广泛研究作为光学信息处理、偏振全息图和二元相位光栅(如达曼光栅)的全息记录介质。[4-6]
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