Tomoki Nagai, H. Nakagawa, Takehiko Naruoka, S. Tagawa, A. Oshima, S. Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Y. Terashita, Y. Minekawa, E. Buitrago, Y. Ekinci, O. Yildirim, M. Meeuwissen, R. Hoefnagels, G. Rispens, C. Verspaget, R. Maas
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引用次数: 27
Abstract
Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.
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