Jung-Hoon Chul, D. Byeon, J. Oh, M. Han, Yearn-Ik Choi
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引用次数: 39
Abstract
The SOI separated shorted-anode LIGBT (SSA-LIGBT) has been investigated by experiments and numerical device simulations. In order to suppresses the negative differential resistance regime which is the inherent drawback of the shorted anode LIGBT (SA-LIGBT), the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path. The SSA-LIGBT shows a remarkably decreased on-state voltage drop when compared with the conventional SA-LIGBT and shows a one-order faster turn-off time than that of the LIGBT.
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