Silicon Integrated Broadband Dual Frequency Comb-based Microwave Detector for Material Characterization

Elif Kaya, K. Entesari
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Abstract

This article presents a miniaturized CMOS integrated microwave detector based on dual frequency-comb for broadband sensing spectroscopy. The LO-free detector chip generates two frequency combs with a tunable spacing, and includes Gaussian second derivative pulse generator, two on-chip slotted slow-wave coplanar waveguide (S-CPW) planar transmission line sensor units, and a broadband heterodyne mixer to generate the output mapped from microwave frequencies to low frequencies which represents the properties of the material under test (MUT). The proposed microwave detector fabricated in TSMC 65 nm CMOS and consumes ~58 mW from a 1 V supply.
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基于硅集成宽带双频梳的材料表征微波探测器
提出了一种基于双频梳的小型化CMOS集成微波探测器,用于宽带传感光谱。无lo检测器芯片产生两个间隔可调的频率梳,包括高斯二阶导数脉冲发生器、两个片上开槽慢波共面波导(S-CPW)平面传输线传感器单元和一个宽带外差混频器,用于产生从微波频率映射到低频的输出,代表被测材料的特性(MUT)。该微波探测器采用台积电65nm CMOS制造,功耗约为58mw,电源电压为1v。
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