PUF designed with Resistive RAM and Ternary States

B. Cambou, M. Orlowski
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引用次数: 27

Abstract

The designs of Physically Unclonable Functions (PUFs) described in this paper are based on Resistive RAMs incorporating ternary states with the objective to reduce false negative authentications (FNA) with low Challenge-Response-Pair (CRP) error rates. Unlike other error correction method, the method is not increasing false positive authentications (FPA). The ternary states, the "Xs", allow the blanking of all cells that are not characterized as consistently capable to generate stable and easy to read "1s" or "0s" PUF challenges. Experimental data extracted from Cu/TaOx/Pt Resistive RAM samples confirms that such a method can generate CRPs having error rates below 8 ppm useable for secure hardware authentication. Random Number Generators (RNG) can also be enhanced by the same ternary architecture.
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采用电阻式RAM和三元态设计PUF
本文描述的物理不可克隆函数(puf)的设计是基于结合三元态的电阻性ram,目的是减少假阴性认证(FNA),降低质询-响应对(CRP)错误率。与其他纠错方法不同,该方法不会增加误报认证(FPA)。三元态,即“x”,允许所有不能持续产生稳定且易于读取的“15”或“0”PUF挑战的细胞的空白。从Cu/TaOx/Pt电阻性RAM样品中提取的实验数据证实,这种方法可以生成错误率低于8ppm的crp,可用于安全硬件认证。随机数生成器(RNG)也可以通过相同的三元体系结构得到增强。
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