{"title":"Effects of fixed charges in the oxide of thermally oxidised m.i.s. solar cells","authors":"O. Nielsen","doi":"10.1049/IJ-SSED.1978.0052","DOIUrl":null,"url":null,"abstract":"The open-circuit voltage V\n o.c. \nof m.i.s. cells has been reported and has been observed from our own experiments to be in the range of 400-525 mV for Al-SiO\n 2 \n-p-Si cells and in the range of 220-400 mV for Au-SiO\n 2 \n-n-Si cells. This is in contrast to the reported values of barrier heights for schottky diodes without an insulating layer. The difference in V\n oc \nis due to the change in the effective barrier height o\n mS \n. The change in o\n mS \nis assumed to be due to fixed positive charges in the thin oxide, and from the reported values of ÷\n mS \nthe charge density in the oxide Q\n ss/q \nhas been calculated to be about 5 × 10\n 12 \ncm\n -2 \n.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1978.0052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The open-circuit voltage V
o.c.
of m.i.s. cells has been reported and has been observed from our own experiments to be in the range of 400-525 mV for Al-SiO
2
-p-Si cells and in the range of 220-400 mV for Au-SiO
2
-n-Si cells. This is in contrast to the reported values of barrier heights for schottky diodes without an insulating layer. The difference in V
oc
is due to the change in the effective barrier height o
mS
. The change in o
mS
is assumed to be due to fixed positive charges in the thin oxide, and from the reported values of ÷
mS
the charge density in the oxide Q
ss/q
has been calculated to be about 5 × 10
12
cm
-2
.