Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0041
R. Plumb, A. Goodwin, R. Baulcomb
Laser threshold currents increase with temperature, and appreciable heat has to be dissipated from the device while it is lasing. Low thermal impedance is therefore essential for c.w. operation at high temperatures and will also extend c.w. operating life at any temperature. Life tests at elevated temperatures on our lasers showed that, in the initial stages of ageing, increases in thermal impedance were dominant. Recent improvements in chip processing have increased the stability of the chip lasing parameters to the point where thermal impedance ageing is significant even at room temperature.1 In this paper, we describe failure analyses of early lasers, discuss possible solutions to the thermal-impedance ageing problem, and finally report controlled life tests of several improved metallisations which eliminate the problem.
{"title":"Thermal-impedance ageing characteristics of c.w. stripe lasers","authors":"R. Plumb, A. Goodwin, R. Baulcomb","doi":"10.1049/IJ-SSED.1979.0041","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0041","url":null,"abstract":"Laser threshold currents increase with temperature, and appreciable heat has to be dissipated from the device while it is lasing. Low thermal impedance is therefore essential for c.w. operation at high temperatures and will also extend c.w. operating life at any temperature. Life tests at elevated temperatures on our lasers showed that, in the initial stages of ageing, increases in thermal impedance were dominant. Recent improvements in chip processing have increased the stability of the chip lasing parameters to the point where thermal impedance ageing is significant even at room temperature.1 In this paper, we describe failure analyses of early lasers, discuss possible solutions to the thermal-impedance ageing problem, and finally report controlled life tests of several improved metallisations which eliminate the problem.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":" 35","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132188837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0044
G. J. Aspin, J. Carroll
Mode locking of semiconductor injection lasers is considered theoretically through the use of rate equations. The laser losses, rather than the material gain bandwidth, are found to limit the pulse width. Estimates for power output and the effects of spontaneous emission can be made
{"title":"Simplified theory for mode locking in injection lasers","authors":"G. J. Aspin, J. Carroll","doi":"10.1049/IJ-SSED.1979.0044","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0044","url":null,"abstract":"Mode locking of semiconductor injection lasers is considered theoretically through the use of rate equations. The laser losses, rather than the material gain bandwidth, are found to limit the pulse width. Estimates for power output and the effects of spontaneous emission can be made","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121295654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0039
C. Chaminant, J. Charil, J. Bouley, E. Rao
The growth and properties of GaAs 1-x Sb x /Ga 1-y Al y As 1-x Sb x double-heterostructure (d.h.s.) lasers have been investigated. We have obtained lasers with an antimony content up to x = 0.17 emitting at wavelengths up to 1.12 μm at room temperature for pulsed currents as low as 120 mA. The d.h.s.s were grown by liquid-phase epitaxy on GaAs substrates. The lattice mismatch problem was overcome by growing up to ten ternary GaAs 1-x Sb x layers of graded Sb composition. A study of quaternary GaAlAsSb layer growth has shown the effect of initial saturation of the melt on the Al content of the resulting solid. To overcome this problem a special epitaxial process has been developed to grow quaternary layers with controlled aluminium content. The relative amounts of Al and Sb were determined by a photoluminescence technique which also allowed us to evaluate the band-gap energy step between the active and confinement layers. A study of the temperature dependence of the threshold current was also made for d.h.s having different aluminium compositions. Threshold current density was found to vary as exp T/T o , where T o reaches 150 K for the highest aluminium content.
研究了GaAs 1-x Sb x / ga1 -y Al - As 1-x Sb x双异质结构(d.h.s)激光器的生长和性能。我们已经获得了锑含量高达x = 0.17的激光器，在室温下，脉冲电流低至120 mA，波长达1.12 μm。采用液相外延法在砷化镓衬底上生长了d.h.s.。通过生长多达10个三元GaAs 1-x Sb x层的渐变Sb组合物，克服了晶格失配问题。第四纪GaAlAsSb层生长的研究表明，熔体的初始饱和度对所得到的固体Al含量有影响。为了克服这一问题，开发了一种特殊的外延工艺来生长铝含量可控的四元层。通过光致发光技术测定了Al和Sb的相对含量，这也使我们能够评估活性层和约束层之间的带隙能量阶跃。本文还研究了不同铝成分的d.h.s的阈值电流与温度的关系。阈值电流密度以exp T/ t0变化，其中t0达到150k时铝含量最高。
{"title":"Growth and properties of GaAsSb/GaAIAsSb double heterostructure lasers","authors":"C. Chaminant, J. Charil, J. Bouley, E. Rao","doi":"10.1049/IJ-SSED.1979.0039","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0039","url":null,"abstract":"The growth and properties of GaAs 1-x Sb x /Ga 1-y Al y As 1-x Sb x double-heterostructure (d.h.s.) lasers have been investigated. We have obtained lasers with an antimony content up to x = 0.17 emitting at wavelengths up to 1.12 μm at room temperature for pulsed currents as low as 120 mA. The d.h.s.s were grown by liquid-phase epitaxy on GaAs substrates. The lattice mismatch problem was overcome by growing up to ten ternary GaAs 1-x Sb x layers of graded Sb composition. A study of quaternary GaAlAsSb layer growth has shown the effect of initial saturation of the melt on the Al content of the resulting solid. To overcome this problem a special epitaxial process has been developed to grow quaternary layers with controlled aluminium content. The relative amounts of Al and Sb were determined by a photoluminescence technique which also allowed us to evaluate the band-gap energy step between the active and confinement layers. A study of the temperature dependence of the threshold current was also made for d.h.s having different aluminium compositions. Threshold current density was found to vary as exp T/T o , where T o reaches 150 K for the highest aluminium content.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123804743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790037
E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr
GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.
{"title":"Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range","authors":"E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr","doi":"10.1049/IJ-SSED:19790037","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790037","url":null,"abstract":"GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131887152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0035
P. Greene, G. Henshall
A horizontal furnace system has been developed for growth by liquid-phase epitaxy of multilayer laser structures consisting of InP and (Ga, In) (As, P) incorporating a number of novel features. Double heterostructure lasers emitting at l.3μm with threshold current densities as low as 900 A/cm2have been made. Measurements of the far-field beam angles have allowed the dielectric constant step between the active quaternary and passive layers for lasers emitting at both 1.15 μm and 1.3 μm (im, to be deduced. Oxide-insulated stripe-geometry c.w. lasers, operating in a single longitudinal mode, have been made with threshold currents down to 180 mA
{"title":"Growth and characteristics of GaInAsp/Inp double heterostructure lasers","authors":"P. Greene, G. Henshall","doi":"10.1049/IJ-SSED.1979.0035","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0035","url":null,"abstract":"A horizontal furnace system has been developed for growth by liquid-phase epitaxy of multilayer laser structures consisting of InP and (Ga, In) (As, P) incorporating a number of novel features. Double heterostructure lasers emitting at l.3μm with threshold current densities as low as 900 A/cm2have been made. Measurements of the far-field beam angles have allowed the dielectric constant step between the active quaternary and passive layers for lasers emitting at both 1.15 μm and 1.3 μm (im, to be deduced. Oxide-insulated stripe-geometry c.w. lasers, operating in a single longitudinal mode, have been made with threshold currents down to 180 mA","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"9 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121002852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790034
J. Whiteaway, J. Carroll
{"title":"Guest editor for this special issue","authors":"J. Whiteaway, J. Carroll","doi":"10.1049/IJ-SSED:19790034","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790034","url":null,"abstract":"","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131206156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0043
M. Osihski, P. Eliseev
The 3-dimensional waveguide problem for stripe-geometry D.H. lasers is solved by an iterative method. The method allows one to self consistently determine the effective dielectric constant. Self-consistent solutions for stripe lasers with symmetric Epstein profiles in the junction plane are compared with approximate solutions obtained by ignoring the influence of the lateral waveguide on the solution of the transversewaveguide problem. It is shown that the approximate method, used previously, can lead to a considerable overestimation of the near-field half width of the fundamental lateral mode.
{"title":"Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers","authors":"M. Osihski, P. Eliseev","doi":"10.1049/IJ-SSED.1979.0043","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0043","url":null,"abstract":"The 3-dimensional waveguide problem for stripe-geometry D.H. lasers is solved by an iterative method. The method allows one to self consistently determine the effective dielectric constant. Self-consistent solutions for stripe lasers with symmetric Epstein profiles in the junction plane are compared with approximate solutions obtained by ignoring the influence of the lateral waveguide on the solution of the transversewaveguide problem. It is shown that the approximate method, used previously, can lead to a considerable overestimation of the near-field half width of the fundamental lateral mode.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"556 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116275241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790038
J. Buus, M. Adams
Various models for calculation of refractive indices in semiconductor laser materials are discussed and the results for GalnAsP compounds are compared. It is shown that the modified single-oscillator model appears to be the most reliable. The group index is also considered since it can be found easily from measurements of laser spectra. The value of the group index is more model sensitive than the refractive index, but it is also a function of the active-layer thickness in double heterostructures as a consequence of waveguide dispersion. A simple formula connecting group and phase indices for a symmetrical dielectric slab waveguide is derived and used to calculate the effective group index for double-heterostructure lasers
{"title":"Phase and group indices for double heterostructure lasers","authors":"J. Buus, M. Adams","doi":"10.1049/IJ-SSED:19790038","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790038","url":null,"abstract":"Various models for calculation of refractive indices in semiconductor laser materials are discussed and the results for GalnAsP compounds are compared. It is shown that the modified single-oscillator model appears to be the most reliable. The group index is also considered since it can be found easily from measurements of laser spectra. The value of the group index is more model sensitive than the refractive index, but it is also a function of the active-layer thickness in double heterostructures as a consequence of waveguide dispersion. A simple formula connecting group and phase indices for a symmetrical dielectric slab waveguide is derived and used to calculate the effective group index for double-heterostructure lasers","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116967941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED.1979.0048
P. Ho
In generating short pulses with GaAs lasers, the bandwidth limited by host dispersion is estimated to be about 1 ps. A simple way to evaluate the dispersive bandwidth of GaAs lasers is given.
{"title":"Comments on host dispersion in ultrashort pulse generation with GaAs lasers","authors":"P. Ho","doi":"10.1049/IJ-SSED.1979.0048","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0048","url":null,"abstract":"In generating short pulses with GaAs lasers, the bandwidth limited by host dispersion is estimated to be about 1 ps. A simple way to evaluate the dispersive bandwidth of GaAs lasers is given.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124052209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-11-01DOI: 10.1049/IJ-SSED:19790042
J. Buus, K. Stubkjaer
A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.
{"title":"Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory","authors":"J. Buus, K. Stubkjaer","doi":"10.1049/IJ-SSED:19790042","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790042","url":null,"abstract":"A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128138677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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