S. Moxim, F. Sharov, D. Hughart, G. Haase, P. Lenahan
{"title":"Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.","authors":"S. Moxim, F. Sharov, D. Hughart, G. Haase, P. Lenahan","doi":"10.2172/1891743","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":213652,"journal":{"name":"Proposed for presentation at the 2021 AVS in , .","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proposed for presentation at the 2021 AVS in , .","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2172/1891743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}