M. Larson, C. Coldren, S. G. Spruytte, H. E. Petersen, J. Harris
{"title":"Low threshold current continuous-wave GaInNAs/GaAs VCSELs","authors":"M. Larson, C. Coldren, S. G. Spruytte, H. E. Petersen, J. Harris","doi":"10.1109/ISLC.2000.882263","DOIUrl":null,"url":null,"abstract":"Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 /spl mu/m range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 /spl mu/m emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 /spl mu/m range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 /spl mu/m emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation.
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