J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, E. Morvan, Y. Baines, G. Ghibaudo, E. Bano
{"title":"Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique","authors":"J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, E. Morvan, Y. Baines, G. Ghibaudo, E. Bano","doi":"10.1109/ICMTS.2015.7106134","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.
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