Investigations into alternative substrate, absorber and buffer layer processing for Cu(In,Ga)Se/sub 2/-based solar cells

J. Tuttle, T. Berens, J. Keane, K. Ramanathan, J. Granata, R. Bhattacharya, H. Wiesner, M. Contreras, R. Noufi
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引用次数: 6

Abstract

High-performance Cu(In,Ga)Se/sub 2/ (CIGS) based solar cells are fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na/sub 2/S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga)/sub y/Se buffer layers contribute to cell performance above 10%. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.
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Cu(In,Ga)Se/sub - 2基太阳能电池衬底、吸收层和缓冲层替代工艺研究
高性能Cu(In,Ga)Se/sub 2/ (CIGS)基太阳能电池是在狭窄的加工选择范围内制造的。在这个贡献中,考虑了替代衬底,吸收层和缓冲层的处理。当采用不同的衬底时,电池性能变化很大。通过Na/sub 2/S化合物加入Na后,这些变化缩小了。溅射和电沉积的CIGS前体和完整的吸收剂有望替代蒸发。为了提高其质量,需要进行再结晶处理。(In,Ga)/sub y/Se缓冲层对电池性能的贡献在10%以上。这些替代品的进一步改进将在短期内使综合电池性能提高10%以上。
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