Adjoint Method to Optimize Power Transistors

Abstract

In this presentation we introduce a robust technique for the design and optimization of the on-state resistance and breakdown voltages in power transistors, including high-electron mobility transistors (HEMTs), metal-oxide-semiconductor (MOS) power devices, insolated-gate bipolar transistors (IGBTs), and power rectifying diodes. The technique is based on the formalism of doping sensitivity functions and allows the computation of the optimum doping profile that maximizes the breakdown voltage and minimizes the on-state resistance of the above devices. Sample numerical simulation results will be presented for a AlGaN/GaN HEMT.