C. Park, P. Chapman, S. Rhee, S. J. Hong, X. Zhang, P. Krein, K. Kim
{"title":"GaN power switching device growth by plasma assisted molecular beam epitaxy","authors":"C. Park, P. Chapman, S. Rhee, S. J. Hong, X. Zhang, P. Krein, K. Kim","doi":"10.1109/IAS.2002.1044143","DOIUrl":null,"url":null,"abstract":"Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.","PeriodicalId":202482,"journal":{"name":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2002.1044143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.
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