Narrow linewidth laser system based on semiconductor lasers

K. Nechay, L. Kuusela, R. Ulkuniemi, P. Sipilä, K. Palomäki, P. Uusimaa
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Abstract

Quantum technologies such as quantum information processing, quantum metrology and sensing rely on single-frequency, low-noise lasers in their core operations. Further development, scalability and commercialization of quantum technologies will be heavily dependent on the availability of affordable single-frequency lasers on a variety of application-specific wavelengths. Quantum applications manifest strict requirements for laser sources in terms of central wavelength, linewidth, long-term stability, polarization extinction ratio, side-mode suppression ratio, etc. Semiconductor lasers offer numerous significant advantages for quantum technology applications. Their broad wavelength coverage is made possible through bandgap engineering of light emitting active area. Intrinsic versatility of semiconductor lasers’ emission coupled with frequency control, which is implemented either through monolithic on-chip gratings such as in distributed Bragg reflector (DBR) and distributed feedback lasers (DFB), or external cavity optical elements, makes semiconductor lasers a very promising laser platform to address the acute need for small-size, mass-produced singlefrequency lasers. Modulight presents the development and characterization results of two narrow-linewidth laser systems incorporating a combination of in-house manufactured single-frequency lasers and internally developed low-noise driving electronics. The first laser system is designed for two-wavelength operation at cooling and repumping frequencies of Rb87 D2 line utilizing near-IR 780.24 nm DBR lasers. Another system example includes frequency-doubled semiconductor laser in the green part of spectrum at 553 nm for Ba photoionization in trapped ion computing applications. Demonstrated exemplar platforms are viable and cost-effective tailorable alternatives to bulky and expensive Ti:Sapphire and legacy dye lasers, thus facilitating the advancement of quantum industry into real-world applications.
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基于半导体激光器的窄线宽激光系统
量子信息处理、量子计量和传感等量子技术的核心操作依赖于单频、低噪声激光器。量子技术的进一步发展、可扩展性和商业化将在很大程度上依赖于各种特定波长的廉价单频激光器的可用性。量子应用对激光源在中心波长、线宽、长期稳定性、偏振消光比、侧模抑制比等方面都有严格的要求。半导体激光器为量子技术的应用提供了许多显著的优势。它们的宽波长覆盖是通过发光活性区的带隙工程实现的。半导体激光器发射固有的多功能性与频率控制相结合,通过单片片上光栅(如分布式布拉格反射器(DBR)和分布式反馈激光器(DFB)或外腔光学元件实现,使半导体激光器成为一个非常有前途的激光平台,以解决对小尺寸、批量生产的单频激光器的迫切需求。Modulight展示了两种窄线宽激光系统的开发和表征结果,该系统结合了内部制造的单频激光器和内部开发的低噪声驱动电子设备。第一个激光系统采用近红外780.24 nm DBR激光器,设计用于Rb87 D2线的冷却和泵浦频率的双波长操作。另一个系统例子包括光谱绿色部分的倍频半导体激光器,波长为553nm,用于捕获离子计算应用中的Ba光离。演示的范例平台是可行且具有成本效益的定制替代品,可以替代体积庞大且昂贵的Ti:蓝宝石和传统染料激光器,从而促进量子工业向现实世界应用的发展。
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Multipartite entanglement and geometry Toward frequency multiplexing for time-bin states A simulation methodology for quantum photonic integrated circuits in the presence of fabrication imperfections, loss, and partially distinguishable photons Fabrication of 780 nm DBR laser diodes for quantum applications Narrow linewidth laser system based on semiconductor lasers
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