M. Funabashi, K. Ohata, K. Onda, K. Hosoya, T. Inoue, M. Kuzuhara, K. Kanckawa, Y. Kobayashi
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引用次数: 30
Abstract
This paper reports a high performance V-band MMIC dielectric resonator oscillator (DRO). The DRO utilizing a 0.15 /spl mu/m gate AlGaAs/InGaAs heterojunction FET has exhibited stabilized oscillation with low phase noise of -88 dBc/Hz at 100 kHz off-carrier and the output power of 3.7 dBm at 55.135 GHz. The oscillation frequency stability of -1.9 ppm//spl deg/C was obtained with a dielectric resonator of +3.3 ppm//spl deg/C temperature coefficient.
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