Realising the potential of SiC devices

Abstract

Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.