C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin
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引用次数: 16
Abstract
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions
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