Carrier Mobility Effect of Electron Transporting Layer on OLED Performance

R. Yadav, D. Dubey, M. Dembla, S. Chen, Tzu-Wei Liang, J. Jou
{"title":"Carrier Mobility Effect of Electron Transporting Layer on OLED Performance","authors":"R. Yadav, D. Dubey, M. Dembla, S. Chen, Tzu-Wei Liang, J. Jou","doi":"10.23919/AM-FPD.2018.8437431","DOIUrl":null,"url":null,"abstract":"Precise optimization and modeling of electron-hole recombination probability in organic light-emitting diodes (OLEDs) are necessary for developing a comprehensive description of their functioning. High-performance organic materials, new device architecture and advanced processing technologies are developed to emerge the development of the OLED community. It is well acknowledged that electrical processes in the OLEDs include three key steps, i.e. charge injection, charge transport, and charge recombination. In this paper, we demonstrate a quantitative approach to investigate the effects of carrier mobility of electron transporting layer (ETL) on electric field and recombination profile across the organic layers of the device using software package SETFOS. The simulation outcomes proposed that a higher electron mobility results in a wider recombination zone in the desired emissive layer (EML), while narrower in case hole mobility is comparatively higher.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Precise optimization and modeling of electron-hole recombination probability in organic light-emitting diodes (OLEDs) are necessary for developing a comprehensive description of their functioning. High-performance organic materials, new device architecture and advanced processing technologies are developed to emerge the development of the OLED community. It is well acknowledged that electrical processes in the OLEDs include three key steps, i.e. charge injection, charge transport, and charge recombination. In this paper, we demonstrate a quantitative approach to investigate the effects of carrier mobility of electron transporting layer (ETL) on electric field and recombination profile across the organic layers of the device using software package SETFOS. The simulation outcomes proposed that a higher electron mobility results in a wider recombination zone in the desired emissive layer (EML), while narrower in case hole mobility is comparatively higher.
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电子传输层载流子迁移率对OLED性能的影响
有机发光二极管(oled)中电子-空穴复合概率的精确优化和建模对于全面描述其功能是必要的。高性能有机材料、新型器件架构和先进的加工技术的发展催生了OLED产业的发展。众所周知,oled中的电过程包括三个关键步骤,即电荷注入、电荷输运和电荷重组。在本文中,我们展示了一种定量的方法来研究电子传递层(ETL)的载流子迁移率对器件有机层间电场和重组剖面的影响。模拟结果表明,电子迁移率越高,期望发射层(EML)的复合区越宽,而空穴迁移率相对较高时,复合区越窄。
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