Design and Performance Analysis of Germanium-Based Junction-less Double Gate MOSFET

Abstract

In this paper, a design for improving the performance of double gate junction-less metal oxide semiconductor field effect transistor by using a Germanium channel is proposed. Initially, Silicon was used as the channel materials but in this paper, germanium is used to prove the performance of the device because it has higher mobility of electrons as compared to silicon, so it is better for small semiconductor devices which have high drain current ratio with high throughput. In this paper the performance of both silicon and germanium has been compared in double gate junction-less metal oxide semiconductor field effect transistor devices namely for - drain induced barrier lowering drain current ratio), subthreshold slope, the threshold voltage (Vth) are investigated for n-type Si-DGJLT and Ge-DGJLT systematically.