Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117376
M. Sharma, Shalendra Kumar, P. A. Alvi
Recently, dilute magnetic semiconductors (DMS) are being utilized due to their ability to tailor the physical characteristics of host material by adding a fraction of dopant ions. Such materials have diverse field of applications especially in the area of spintronics as well as optoelectronics. The oxygen deficiency in doped SnO2 serves as favorable condition to be used as transparent conducting oxide (TCO). Here, the structural and optical study of pristine and iron incorporated SnO2 with varying doping concentration synthesized via chemical co-precipitation technique has been carried out. The investigation of different properties of the prepared samples has been performed via X-ray diffraction (XRD) technique and UV -Vis spectroscopic technique to confirm the single phase nature and to determine various structural parameters and band-gap. The Reitveld refinement of XRD patterns confirms that all samples exhibits rutile tetragonal phase structure with no indication of additional phase formation and the crystallite sizes were obtained in the range 7–10nm. The samples display wide absorbance for the ultraviolet region and shows tunable optical band gaps with change in doping level.
{"title":"Role of Fe (Transition Metal) in Tuning the Optical Behavior of SnO2 Nanoparticles","authors":"M. Sharma, Shalendra Kumar, P. A. Alvi","doi":"10.1109/ICONC345789.2020.9117376","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117376","url":null,"abstract":"Recently, dilute magnetic semiconductors (DMS) are being utilized due to their ability to tailor the physical characteristics of host material by adding a fraction of dopant ions. Such materials have diverse field of applications especially in the area of spintronics as well as optoelectronics. The oxygen deficiency in doped SnO2 serves as favorable condition to be used as transparent conducting oxide (TCO). Here, the structural and optical study of pristine and iron incorporated SnO2 with varying doping concentration synthesized via chemical co-precipitation technique has been carried out. The investigation of different properties of the prepared samples has been performed via X-ray diffraction (XRD) technique and UV -Vis spectroscopic technique to confirm the single phase nature and to determine various structural parameters and band-gap. The Reitveld refinement of XRD patterns confirms that all samples exhibits rutile tetragonal phase structure with no indication of additional phase formation and the crystallite sizes were obtained in the range 7–10nm. The samples display wide absorbance for the ultraviolet region and shows tunable optical band gaps with change in doping level.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115613273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117352
Ayush, Hem Prabha, Rajul Kumar
The paper emphasis a simplified H∞ control strategy designed for trajectory tracking control for (TRMS) i.e. twin rotor multi-input multi-output system. Twin Rotor MIMO System (TRMS) is a benchmarked non-linear aero dynamical laboratory model having striking comparison like a helicopter but it doesn't fly. It is having 2-DOF (Degree of freedom), which corresponds to pitch and yaw angles determining the vertical and horizontal position of the TRMS. This paper elaborates a robust H∞ controller designed strategy for cross-coupled TRMS model as it guarantees robustness and good performance. The performance of the controller is tested and response of yaw and pitch are experimentally obtained through extensive simulation in MATLAB.
{"title":"Robust H∞ Control Approach for Trajectory Tracking of Twin Rotor MIMO System","authors":"Ayush, Hem Prabha, Rajul Kumar","doi":"10.1109/ICONC345789.2020.9117352","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117352","url":null,"abstract":"The paper emphasis a simplified H∞ control strategy designed for trajectory tracking control for (TRMS) i.e. twin rotor multi-input multi-output system. Twin Rotor MIMO System (TRMS) is a benchmarked non-linear aero dynamical laboratory model having striking comparison like a helicopter but it doesn't fly. It is having 2-DOF (Degree of freedom), which corresponds to pitch and yaw angles determining the vertical and horizontal position of the TRMS. This paper elaborates a robust H∞ controller designed strategy for cross-coupled TRMS model as it guarantees robustness and good performance. The performance of the controller is tested and response of yaw and pitch are experimentally obtained through extensive simulation in MATLAB.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124644155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117531
C. Ravariu, Avireni Srinivasulu, D. Mihaiescu
This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.
{"title":"Dynamic and Noise Performances of the Nothing On Insulator Device","authors":"C. Ravariu, Avireni Srinivasulu, D. Mihaiescu","doi":"10.1109/ICONC345789.2020.9117531","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117531","url":null,"abstract":"This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127775914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117456
Khimraj, P. Shukla, Ankit Vijayvargiya, R. Kumar
Human Activity Recognition is a procedure for arranging the activity of an individual utilizing responsive sensors of the smartphone that are influenced by human activity. Its standouts among the most significant building blocks for numerous smartphone applications, for example, medical-related applications, tracking of fitness, context-aware mobile, survey system of human, and so forth. This investigation centers around acknowledgment of human activity utilizing sensors of the smartphone by some machine learning and deep learning characterization approaches. Data received from the accelerometer sensor and gyroscope sensor of the smartphone are grouped to recognize the human activity.
{"title":"Human Activity Recognition using Accelerometer and Gyroscope Data from Smartphones","authors":"Khimraj, P. Shukla, Ankit Vijayvargiya, R. Kumar","doi":"10.1109/ICONC345789.2020.9117456","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117456","url":null,"abstract":"Human Activity Recognition is a procedure for arranging the activity of an individual utilizing responsive sensors of the smartphone that are influenced by human activity. Its standouts among the most significant building blocks for numerous smartphone applications, for example, medical-related applications, tracking of fitness, context-aware mobile, survey system of human, and so forth. This investigation centers around acknowledgment of human activity utilizing sensors of the smartphone by some machine learning and deep learning characterization approaches. Data received from the accelerometer sensor and gyroscope sensor of the smartphone are grouped to recognize the human activity.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124249724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117425
Gaurav Dhiman, R. Pourush
The fabrication of nanometer-scale traditional MOSFETs with junctions has become very challenging. The newer devices like junction less double gate MOSFETs are in focus as they have shown good electrostatic behavior compared with traditional MOSFETs. In this paper, we introduce new device architecture with high-k spacers placed on either side of both the gates of a junctionless double gate MOSFET. The effect of the high dielectric constant (ksp) of the spacer on the device characteristics has been studied. This paper investigates the junctionless double gate MOSFETs with high-k spacers of materials like silicon dioxide (SiO2), hafnium oxide (HfO2) and aluminum oxide (Al2O3). One of the important considerations for selecting the particular metal gate material is metal work function as it directly affects threshold voltage and the performance of the transistor. The work is done on the device to carry out analysis for drain induced barrier lowering (DIBL), output characteristics, transfer characteristics and ION/ IOFF ratio.
{"title":"Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers","authors":"Gaurav Dhiman, R. Pourush","doi":"10.1109/ICONC345789.2020.9117425","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117425","url":null,"abstract":"The fabrication of nanometer-scale traditional MOSFETs with junctions has become very challenging. The newer devices like junction less double gate MOSFETs are in focus as they have shown good electrostatic behavior compared with traditional MOSFETs. In this paper, we introduce new device architecture with high-k spacers placed on either side of both the gates of a junctionless double gate MOSFET. The effect of the high dielectric constant (ksp) of the spacer on the device characteristics has been studied. This paper investigates the junctionless double gate MOSFETs with high-k spacers of materials like silicon dioxide (SiO2), hafnium oxide (HfO2) and aluminum oxide (Al2O3). One of the important considerations for selecting the particular metal gate material is metal work function as it directly affects threshold voltage and the performance of the transistor. The work is done on the device to carry out analysis for drain induced barrier lowering (DIBL), output characteristics, transfer characteristics and ION/ IOFF ratio.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126831816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/iconc345789.2020.9117441
{"title":"International Conference on Emerging Trends in Communication, Control and Computing","authors":"","doi":"10.1109/iconc345789.2020.9117441","DOIUrl":"https://doi.org/10.1109/iconc345789.2020.9117441","url":null,"abstract":"","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121654872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117341
Subarna Sen, A. Mukherjee, J. Mondal, Anil Saroliya
Reversible Data Hiding (RDH) has proved itself to be the best technique for providing security to sensitive datasets. RDH provides confidentiality, preserves privacy of secret and personal data and ensures reversibility. Several working principles are adhered for different RDH techniques for encryption and data embedding, in the past two decades. RDH covers all the basics of a proper cryptographic algorithm, i.e. confidentiality, integrity and availability. Furthermore, it works better for sensitive images. Based on the working methodologies and implementation area RDH schemes can be categorically divided into 4 types: (i) RDH in compressed domain, (ii) RDH in spatial domain, (iii) RDH for contrast enhancement and (iv) RDH in encrypted domain. This work presents a survey on the some recent RDH mechanisms working on encrypted domain. RDH schemes achieve different outcomes based on the intension and implementation. This review, shows the different services that RDH provides and the best base-methodologies to achieve high security along with maximum reversibility.
{"title":"A Contemplator on Reversible Data Hiding in Encrypted Domain","authors":"Subarna Sen, A. Mukherjee, J. Mondal, Anil Saroliya","doi":"10.1109/ICONC345789.2020.9117341","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117341","url":null,"abstract":"Reversible Data Hiding (RDH) has proved itself to be the best technique for providing security to sensitive datasets. RDH provides confidentiality, preserves privacy of secret and personal data and ensures reversibility. Several working principles are adhered for different RDH techniques for encryption and data embedding, in the past two decades. RDH covers all the basics of a proper cryptographic algorithm, i.e. confidentiality, integrity and availability. Furthermore, it works better for sensitive images. Based on the working methodologies and implementation area RDH schemes can be categorically divided into 4 types: (i) RDH in compressed domain, (ii) RDH in spatial domain, (iii) RDH for contrast enhancement and (iv) RDH in encrypted domain. This work presents a survey on the some recent RDH mechanisms working on encrypted domain. RDH schemes achieve different outcomes based on the intension and implementation. This review, shows the different services that RDH provides and the best base-methodologies to achieve high security along with maximum reversibility.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131503269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117474
Vipin Kumar, R. P. Tewari
Ankle sprains are more common injuries that encounter in daily physical and various sports activities. Stiffness of an ankle-foot orthosis (AFO) and muscle co-activation may influence the risk of an ankle injury. The purpose of this study is to examine the impact of passive ankle-foot orthosis stiffness and muscle co-activation on ankle inversion injury. The landing on the platform is being performed for different stiffness of AFOs, with and without muscle co-activation. Results indicate that increasing AFO stiffness reduces the subtalar angle, i.e., reduces the chance of ankle injury. Thus, the use of an AFO with muscle co-activation mitigates the ankle inversion injury. A moderate AFO's stiffness is best fit in the prevention of ankle injuries.
{"title":"Impact of Ankle-Foot Orthosis Stiffness and Muscle Coactivation on Ankle Injury During Landing","authors":"Vipin Kumar, R. P. Tewari","doi":"10.1109/ICONC345789.2020.9117474","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117474","url":null,"abstract":"Ankle sprains are more common injuries that encounter in daily physical and various sports activities. Stiffness of an ankle-foot orthosis (AFO) and muscle co-activation may influence the risk of an ankle injury. The purpose of this study is to examine the impact of passive ankle-foot orthosis stiffness and muscle co-activation on ankle inversion injury. The landing on the platform is being performed for different stiffness of AFOs, with and without muscle co-activation. Results indicate that increasing AFO stiffness reduces the subtalar angle, i.e., reduces the chance of ankle injury. Thus, the use of an AFO with muscle co-activation mitigates the ankle inversion injury. A moderate AFO's stiffness is best fit in the prevention of ankle injuries.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133528552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117523
K. Pramod Kumar, H. Bansal
This paper talks about the vehicle-to-grid (V2G) idea, which is a system wherein electric vehicles (EVs) communicate with the power grid to trade services by either returning electricity to the grid or by regulating the power grid. The paper deals with the theoretical incentives bringing together the four players of V2G: car owners, power firms, aggregators and the society; and the barriers which they face for the commercialization of V2G. The paper then goes on to focus on the Indian market and the specific obstacles faced by the Indian market for the incorporation of V2G.
{"title":"Commercial Sustainability of Vehicle-to-Grid Concept: An Overview","authors":"K. Pramod Kumar, H. Bansal","doi":"10.1109/ICONC345789.2020.9117523","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117523","url":null,"abstract":"This paper talks about the vehicle-to-grid (V2G) idea, which is a system wherein electric vehicles (EVs) communicate with the power grid to trade services by either returning electricity to the grid or by regulating the power grid. The paper deals with the theoretical incentives bringing together the four players of V2G: car owners, power firms, aggregators and the society; and the barriers which they face for the commercialization of V2G. The paper then goes on to focus on the Indian market and the specific obstacles faced by the Indian market for the incorporation of V2G.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"364 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132791804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/ICONC345789.2020.9117499
B. Kumari, Aavishkar Katti, P. A. Alvi
This paper presents a brief study of the GaAs/Al0.20 Ga0.80As material system based photo-detector via simulation of the optical absorption, which has been simulated by making the detailed calculations of the envelope wavefunctions associated with valence and conduction band and as well as calculation of the dispersed energies of electrons and holes within the respective bands of the heterostructure. The calculated absorption peak is found to congregate at the photonic wavelength ~ 0.76 µm, which confirm the utility of the designed heterostructure in photonic biosensors and luminescence scintillators.
{"title":"Absorption in Al0.20Ga0.80As-GaAs MQWs Heterostructure","authors":"B. Kumari, Aavishkar Katti, P. A. Alvi","doi":"10.1109/ICONC345789.2020.9117499","DOIUrl":"https://doi.org/10.1109/ICONC345789.2020.9117499","url":null,"abstract":"This paper presents a brief study of the GaAs/Al0.20 Ga0.80As material system based photo-detector via simulation of the optical absorption, which has been simulated by making the detailed calculations of the envelope wavefunctions associated with valence and conduction band and as well as calculation of the dispersed energies of electrons and holes within the respective bands of the heterostructure. The calculated absorption peak is found to congregate at the photonic wavelength ~ 0.76 µm, which confirm the utility of the designed heterostructure in photonic biosensors and luminescence scintillators.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133152696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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