A 10Gbps Burst-Mode CDR Circuit in 0.18μm CMOS

Che-Fu Liang, Sy-Chyuan Hwu, Shen-Iuan Liu
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引用次数: 20

Abstract

A 10Gbps burst-mode clock and data recovery (CDR) circuit has been fabricated in 0.18mum CMOS technology. It recovers the input data and clock within 32 bits by using a gated voltage-controlled oscillator, a quadrature generator and a phase-aligning loop incorporating a half-rate bang-bang phase detector and a digital phase interpolator. The measured peak-to-peak jitter of the recovered clock is 10.44ps. The die area is 1.73 times 2.01 mm2 and draw 200mW from a 1.8V supply.
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基于0.18μm CMOS的10Gbps突发模式CDR电路
一个10Gbps突发模式时钟和数据恢复(CDR)电路已制成0.18 μ m CMOS技术。它通过使用一个门控压控振荡器、一个正交发生器和一个包含半速率bang-bang相位检测器和数字相位插补器的相位对准环路来恢复输入数据和32位内的时钟。测量到的恢复时钟的峰对峰抖动为10.44ps。模具面积为1.73乘以2.01 mm2,从1.8V电源吸取200mW。
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