Lee Jong Bum, A. Li, How Yuan Hwang, Pan Wei Chih, Y. Xin, Rhee Min Woo Daniel
{"title":"Characterization of pressure-less Ag sintering on Ni/Au surface","authors":"Lee Jong Bum, A. Li, How Yuan Hwang, Pan Wei Chih, Y. Xin, Rhee Min Woo Daniel","doi":"10.1109/EPTC.2015.7412369","DOIUrl":null,"url":null,"abstract":"Ag sintering has been widely studied as a lead-free die attach solution for power electronics. A soak time of a dozen minutes at the sintering temperature is necessary to establish strong bond strength by the conventional heating method. Chemical bonding can be achieved by various parameters associated with the metallurgical bond of the adjacent surfaces. In this study, attaching technology between Au coated Si die and Au coated Si substrate was developed by applying Ag sintering materials which can work at temperature up to 350°C. It was concentrated on finding so called \"pressure-less sintering and pressure sintering\" procedure in air and N2 environment. The sintering was performed in air or N2 at temperature range from 180°C to 280°C for 10 minutes to 3 hours. Highest shear strength was obtained at 200°C of sintering temperature bonded for 3 hours.","PeriodicalId":418705,"journal":{"name":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2015.7412369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Ag sintering has been widely studied as a lead-free die attach solution for power electronics. A soak time of a dozen minutes at the sintering temperature is necessary to establish strong bond strength by the conventional heating method. Chemical bonding can be achieved by various parameters associated with the metallurgical bond of the adjacent surfaces. In this study, attaching technology between Au coated Si die and Au coated Si substrate was developed by applying Ag sintering materials which can work at temperature up to 350°C. It was concentrated on finding so called "pressure-less sintering and pressure sintering" procedure in air and N2 environment. The sintering was performed in air or N2 at temperature range from 180°C to 280°C for 10 minutes to 3 hours. Highest shear strength was obtained at 200°C of sintering temperature bonded for 3 hours.
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