{"title":"Investigation of parallel operation of IGBTs","authors":"J. J. Nelson, G. Venkataramanan, B. Beihoff","doi":"10.1109/IAS.2002.1042811","DOIUrl":null,"url":null,"abstract":"Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.","PeriodicalId":202482,"journal":{"name":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2002.1042811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 36
Abstract
Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.