C. Claeys, A. Firrincieli, K. Martens, J. Kittl, E. Simoen
{"title":"Contact technology schemes for advanced Ge and III-V CMOS technologies","authors":"C. Claeys, A. Firrincieli, K. Martens, J. Kittl, E. Simoen","doi":"10.1109/ICCDCS.2012.6188889","DOIUrl":null,"url":null,"abstract":"For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.
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