Robustness of GaN vertical superjunction HEMT

Abstract

We have examined the robustness of the novel enhancement-mode GaN vertical superjunction HEMT using numerical simulations, which has been designed previously and projected to have best Ron, sp of 4.2 mQ-cm2 and BV of 12.4kV, and compared it with a GaN vertical HEMT with conventional drift region. The GaN vertical superjunction HEMT with 8 μm pillar width shows 7X higher on-state current level and 1/5 of the Ron, sp compared with The simulated on-state breakdown voltage of the GaN vertical superjunction HEMT structure shows 4.5% drop from the off-state breakdown voltage, and is only slightly higher than the 1.7% drop of the conventional GaN vertical HEMT.