Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126471
Yang-Hua Chang, Lu-Hao Yang
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引用次数: 1

Abstract

In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGaN layer, and the doping concentration of the p-doped region. Secondly, the E-mode device with highest breakdown voltage is selected, and then implemented with an electron-blocking layer (EBL) structure. The EBL structure is optimized to further improve the breakdown voltage.
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具有电子阻挡层结构的双通道E-Mode AlGaN/GaN hemt
本研究改进了双通道AlGaN/GaN HEMT的阈值电压和击穿电压。首先，通过优化凹栅的深度、AlGaN层中的Al比和p掺杂区掺杂浓度，将耗尽模式(d模式)转变为增强模式(e模式)。其次，选择击穿电压最高的e模器件，采用电子阻挡层(EBL)结构实现;优化了EBL结构，进一步提高了击穿电压。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)
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