New three dimensional (3D) memory array architecture for future ultra high density DRAM (invited)

Abstract

Three dimensional (3D) memory array architecture is realized by stacking several cells in series vertically up on each cell which is located in a two dimensional (2D) array matrix. Total bit-line capacitance of this proposed architecture's DRAM is suppressed to 37% of that of a normal DRAM, when one bit-line has 1K-bit cells and the same design rules are used. Moreover, array area of a 1 Mbit DRAM using the proposed architecture, is reduced to 11.5% of that of a normal DRAM using the same design rules.