{"title":"A Cross-shaped Vertical Vacuum Channel Transistor","authors":"Zhao Jin, Zhuoya Zhu, Wei Lei, Yi Xie","doi":"10.1109/iccss55260.2022.9802313","DOIUrl":null,"url":null,"abstract":"Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iccss55260.2022.9802313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.
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