S. Kovachov, I. Bohdanov, Z. Karipbayev, Y. Suchikova, Tamara Tsebriienko, Anatoli I. Popov
{"title":"Layer-by-Layer Synthesis and Analysis of the the Phase Composition of Cdx TeyOz/CdS/por-ZnO/ZnO Heterostructure","authors":"S. Kovachov, I. Bohdanov, Z. Karipbayev, Y. Suchikova, Tamara Tsebriienko, Anatoli I. Popov","doi":"10.1109/KhPIWeek57572.2022.9916492","DOIUrl":null,"url":null,"abstract":"Cd<inf>x</inf> Te<inf>y</inf>O<inf>z</inf>/CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of electrochemical etching followed by the ion layer adsorption and reaction method (SILAR). Electrochemical etching was applied to form a porous ZnO layer. Chemical deposition from the electrolyte solution was carried out to form CdS and Cd<inf>x</inf>Te<inf>y</inf>O<inf>z</inf>films. The phase composition of the obtained heterostructures was characterized using XRD and Raman methods. We have demonstrated that the Cd<inf>x</inf>Te<inf>y</inf>O<inf>z</inf>film consists of different phase configurations, depending on the concentration of each element. The extreme cases are the formation of Cd<inf>x</inf>O<inf>z</inf>and TeyOz. Furthermore, the formation of complex CdTeO<inf>3</inf>CdTe<inf>3</inf>O<inf>8</inf>oxides is observed. Such structures have prospects for wide application in electronic devices due to the ability to adjust the phase and component composition.","PeriodicalId":197096,"journal":{"name":"2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KhPIWeek57572.2022.9916492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Cdx TeyOz/CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of electrochemical etching followed by the ion layer adsorption and reaction method (SILAR). Electrochemical etching was applied to form a porous ZnO layer. Chemical deposition from the electrolyte solution was carried out to form CdS and CdxTeyOzfilms. The phase composition of the obtained heterostructures was characterized using XRD and Raman methods. We have demonstrated that the CdxTeyOzfilm consists of different phase configurations, depending on the concentration of each element. The extreme cases are the formation of CdxOzand TeyOz. Furthermore, the formation of complex CdTeO3CdTe3O8oxides is observed. Such structures have prospects for wide application in electronic devices due to the ability to adjust the phase and component composition.