{"title":"An ion-implanted N-well bipolar process for university analog integrated circuit fabrication","authors":"A.R. La Pietra, L. Fuller","doi":"10.1109/UGIM.1991.148121","DOIUrl":null,"url":null,"abstract":"A five-mask-level, isolated bipolar process was developed. Phosphorous was selectively implanted and annealed into p-type wafers to form the electrically isolated n-wells, and a double diffusion process was used to create active devices inside the n-wells. Several bipolar transistors and simple circuits were successfully fabricated and tested over three developmental processing runs.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.1991.148121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A five-mask-level, isolated bipolar process was developed. Phosphorous was selectively implanted and annealed into p-type wafers to form the electrically isolated n-wells, and a double diffusion process was used to create active devices inside the n-wells. Several bipolar transistors and simple circuits were successfully fabricated and tested over three developmental processing runs.<>
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