A Transfer Model of High-G Shock for MEMS in Real Working Conditions

Tianfang Peng, Zheng You
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Abstract

High-g shock is a critical challenge for MEMS. The acceleration that eventually acts on the microstructure of MEMS is usually different from the original shock in terms of amplitude and frequency due to factors like mounting and packaging. This inconsistency makes it difficult to measure the shocks accurately and assess the reliability of MEMS. This paper proposes a system-level transfer model of shock for MEMS in actual working conditions based on the lumped mechanical system model. Numerical and experimental results validated the effectiveness of this model. Mounting and packaging methods, which may influence the transfer process of high-g shock, were then analyzed. Several shock-resistant suggestions based on our model were proposed and experimentally validated.
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真实工作条件下MEMS高g冲击传递模型
高g冲击是MEMS面临的关键挑战。由于安装和封装等因素,最终作用于MEMS微结构的加速度通常在振幅和频率方面与原始冲击不同。这种不一致性给精确测量冲击和评估MEMS的可靠性带来了困难。基于集总机械系统模型,提出了微机电系统在实际工况下的系统级冲击传递模型。数值和实验结果验证了该模型的有效性。对影响高g冲击传递过程的安装和封装方法进行了分析。在此基础上提出了若干抗冲击建议,并进行了实验验证。
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