{"title":"Ultra-shallow junction formation using cobalt silicide as diffusion source","authors":"S. Kal, I. Kasko, H. Ryssel","doi":"10.1109/TENCON.1995.496394","DOIUrl":null,"url":null,"abstract":"Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.
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