Programmable CCCII: reliability analysis and design methodology

M. K. Tiwari, N. Pandey, S. K. Paul, Saiyid Mohammad Irshad Rizvi
{"title":"Programmable CCCII: reliability analysis and design methodology","authors":"M. K. Tiwari, N. Pandey, S. K. Paul, Saiyid Mohammad Irshad Rizvi","doi":"10.1049/IET-CDS.2018.5165","DOIUrl":null,"url":null,"abstract":"In this study, an effective and efficient approach for reliability analysis is developed to bridge the gap between device-level reliability and that at the product level. Continual reduction of device dimensions, gate-oxide and increase in channel doping results in an increased electric field which is introducing most of the reliability concerns. Four most important reliability issues impacting circuit design are hot carrier injection, bias temperature instability, time-dependent dielectric breakdown and self-heating. As the second-generation current controlled conveyor (CCCII) circuit are used to implement oscillator, filter clock and so on, which are working continuously even in sleep mode. So it is important to take care of all the reliability aspects while designing CCCII. There is a challenge in complex design to identify which devices (MOS, resistor and capacitor) are susceptible to degradation and then redesign and mitigate this effect for a robust and reliable design. The objective of this work is to detect reliability issues and design a programmable current conveyor which can work safely for a long duration. The circuit has been designed and simulated using 28 nm CMOS technology model parameters on Cadence Virtuoso/AMS environment (ELDO simulator) using ± 1.8 V supply voltage and results have been verified with post-layout netlist.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IET-CDS.2018.5165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this study, an effective and efficient approach for reliability analysis is developed to bridge the gap between device-level reliability and that at the product level. Continual reduction of device dimensions, gate-oxide and increase in channel doping results in an increased electric field which is introducing most of the reliability concerns. Four most important reliability issues impacting circuit design are hot carrier injection, bias temperature instability, time-dependent dielectric breakdown and self-heating. As the second-generation current controlled conveyor (CCCII) circuit are used to implement oscillator, filter clock and so on, which are working continuously even in sleep mode. So it is important to take care of all the reliability aspects while designing CCCII. There is a challenge in complex design to identify which devices (MOS, resistor and capacitor) are susceptible to degradation and then redesign and mitigate this effect for a robust and reliable design. The objective of this work is to detect reliability issues and design a programmable current conveyor which can work safely for a long duration. The circuit has been designed and simulated using 28 nm CMOS technology model parameters on Cadence Virtuoso/AMS environment (ELDO simulator) using ± 1.8 V supply voltage and results have been verified with post-layout netlist.
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可编程CCCII:可靠性分析和设计方法
在本研究中,开发了一种有效的可靠性分析方法,以弥合设备级可靠性与产品级可靠性之间的差距。器件尺寸的不断减小,栅极氧化和通道掺杂的增加导致电场的增加,这是引入大多数可靠性问题的原因。影响电路设计的四个最重要的可靠性问题是热载流子注入、偏置温度不稳定性、随时间变化的介质击穿和自加热。第二代电流控制输送机(CCCII)电路用于实现振荡器、滤波器时钟等,即使在休眠模式下也能连续工作。因此,在设计CCCII时,考虑到所有方面的可靠性是很重要的。在复杂的设计中,识别哪些器件(MOS、电阻器和电容器)容易退化,然后重新设计并减轻这种影响,以实现稳健可靠的设计,这是一个挑战。这项工作的目的是检测可靠性问题,并设计一个可编程的电流输送机,可以安全工作很长一段时间。采用28nm CMOS技术模型参数在Cadence Virtuoso/AMS环境(ELDO模拟器)上进行了电路设计和仿真,电源电压为±1.8 V,并通过布局后网表对结果进行了验证。
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